Method and system for design of a reticle to be manufactured using character projection lithography
US7759027B2 · kind B2 · utility
41Cited by
10References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 1, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 30, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fracturing or mask data preparation or proximity effect correction is disclosed which comprises the steps of inputting patterns to be formed on a surface, a subset of the patterns being slightly different variations of each other and selecting a set of characters some of which are complex characters to be used to form the number of patterns, and reducing shot count or total write time by use of a character varying technique. A system for fracturing or mask data preparation or proximity effect correction is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.