Semiconductor device and method of manufacturing thereof
US7759161B2 · kind B2 · utility
13Cited by
7References
1Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 27, 2006 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Oct 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to implement a high-density high-performance semiconductor system small in size, there is provided a method for implementing three-dimensional connection between a plurality of semiconductor chips differing from each other with the shortest metal interconnect length, using penetration electrodes, thereby enabling a fast operation at a low noise level, the method being a three-dimensional connection method very low in cost, and short in TAT in comparison with the known example, capable of bonding at an ordinary temperature, and excellent in connection reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.