Low temperature ion implantation for improved silicide contacts
US7759208B1 · kind B1 · utility
6Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2009 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Mar 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method that cools a substrate to a temperature below 10° C. and then implants ions into the substrate while the temperature of the substrate is below 10° C. The implanting causes damage to a first depth of the substrate to create an amorphized region in the substrate. The method forms a layer of metal on the substrate and heats the substrate until the metal reacts with the substrate and forms a silicide region within the amorphized region of the substrate. The depth of the silicide region is at least as deep as the first depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.