Inventor · Pleasantville, NY, US

Ahmet S. Ozcan

88Patents
6h-index
76Co-inventors
71Inventor score

Filing activity: Jun 10, 2008 → Sep 21, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8603881B1 Raised trench metal semiconductor alloy formation Electricity 10 Active
US8598006B2 Strain preserving ion implantation methods Electricity 9 Active
US8278200B2 Metal-semiconductor intermixed regions Electricity 8 Active
US8614107B2 Liner-free tungsten contact Electricity 8 Active
US8030154B1 Method for forming a protection layer over metal semiconductor contact and structure formed thereon Electricity 7 Active
US8349716B2 Semiconductor device with reduced junction leakage and an associated method of forming such a semiconductor device Electricity 7 Active
US7759208B1 Low temperature ion implantation for improved silicide contacts Electricity 6 Active
US9379012B2 Oxide mediated epitaxial nickel disilicide alloy contact formation Electricity 6 Active
US8614106B2 Liner-free tungsten contact Electricity 5 Active
US8796099B2 Inducing channel strain via encapsulated silicide formation Electricity 5 Active
US10269714B2 Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements Electricity 4 Active
US7993987B1 Surface cleaning using sacrificial getter layer Electricity 4 Active
US9093425B1 Self-aligned liner formed on metal semiconductor alloy contacts Electricity 3 Active
US8927422B2 Raised silicide contact Electricity 3 Active
US10546941B2 Forming thermally stable salicide for salicide first contacts Electricity 3 Active
US9236345B2 Oxide mediated epitaxial nickel disilicide alloy contact formation Electricity 3 Active
US10685888B2 Low resistance source-drain contacts using high temperature silicides Electricity 2 Active
US11101219B2 Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements Electricity 2 Active
US8021971B2 Structure and method to form a thermally stable silicide in narrow dimension gate stacks Electricity 2 Active
US9882005B2 Fully depleted silicon-on-insulator device formation Electricity 2 Active
US10985105B2 Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements Electricity 2 Active
US9786547B2 Channel silicon germanium formation method Electricity 2 Active
US8829645B2 Structure and method to form e-fuse with enhanced current crowding Electricity 1 Active
US10943988B2 Thermally stable salicide formation for salicide first contacts Electricity 1 Active
US8456011B2 Method to control metal semiconductor micro-structure Electricity 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.