Dual damascene integration structure and method for forming improved dual damascene integration structure
US7759251B2 · kind B2 · utility
9Cited by
17References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2005 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Apr 21, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.