Selective nitridation of gate oxides

US7759260B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jay Burnham · Fletcher, US
• John J. Ellis-Monaghan · Grand Isle, US
• James S. Nakos · Saint Johnsbury Center, US
• James J. Quinlivan · South Burlington, US

Key dates

• Filing date: Aug 16, 2006
• Grant date: Jul 20, 2010
• Expiry date: Aug 1, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0181

Abstract

A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and introducing a second amount of nitrogen into the second feature of the second active device, the second amount of nitrogen being different from the first amount of nitrogen.