Methods for implanting B22Hx and its ionized lower mass byproducts
US7759657B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for implanting an ionized polyhedral borane cluster or a selected ionized lower mass byproduct into a workpiece generally includes vaporizing and ionizing a polyhedral borane cluster molecule in an ion source to create a plasma and produce ionized polyhedral borane cluster molecules and its ionized lower mass byproducts. The ionized polyhedral borane cluster molecules and lower mass byproducts within the plasma are then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit selected ionized polyhedral borane cluster molecules or selected ionized lower mass byproducts to pass therethrough and implant into a workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.