Method manufacturing capacitor dielectric
US7759718B2 · kind B2 · utility
5Cited by
0References
1Claims
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Key dates
| Filing date | Oct 2, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | May 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.