Magnetic memory cell and random access memory
US7759750B2 · kind B2 · utility
2Cited by
4References
5Claims
0Family size
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Key dates
| Filing date | Apr 24, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Apr 24, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To provide a highly-reliable, low-power-consumption nonvolatile memory. A magnetization reversal of a ferromagnetic free layer is accomplished with a spin transfer torque in a state where an appropriate magnetic field is applied in a direction orthogonal to the direction of the magnetic easy axis of the ferromagnetic free layer of the tunnel magnetoresistance device that the magnetic memory cell includes. Preferably, the magnetic field is applied in a direction forming an angle of 45° with the direction perpendicular to the film plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.