Anti-reflection structures for CMOS image sensors
US7759755B2 · kind B2 · utility
27Cited by
27References
16Claims
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Key dates
| Filing date | May 14, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Aug 27, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.