Dual-pixel full color CMOS imager
US7759756B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jul 27, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A dual-pixel full color complementary metal oxide semiconductor (CMOS) imager is provided, along with an associated fabrication process. Two stand-alone pixels are used for three-color detection. The first pixel is a single photodiode, and the second pixel has two photodiodes built in a stacked structure. The two photodiode stack includes an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer overlying the substrate and a bottom n doped layer cathode overlying the bottom p doped layer. The top photodiode has a top p doped layer overlying the bottom n doped layer and a top n doped layer cathode overlying the top p doped layer. The single photodiode includes the n doped substrate, a p doped layer overlying the substrate, and an n doped layer cathode overlying the p doped layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.