Inventor · Camas, WA, US

Jong-Jan Lee

167Patents
22h-index
45Co-inventors
90Inventor score

Filing activity: Mar 7, 1997 → Jan 8, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7115945B2 Strained silicon fin structure Electricity 321 Expired
US7419844B2 Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer Electricity 263 Active
US7800148B2 CMOS active pixel sensor Electricity 218 Active
US7045401B2 Strained silicon finFET device Electricity 170 Expired
US6562703B1 Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content Emerging Cross-Sectional Technologies 77 Expired
US7323349B2 Self-aligned cross point resistor memory array Electricity 58 Active
US9825202B2 Display with surface mount emissive elements Electricity 55 Active
US7378286B2 Semiconductive metal oxide thin film ferroelectric memory transistor Electricity 52 Expired
US6703293B2 Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates Emerging Cross-Sectional Technologies 41 Expired
US7015147B2 Fabrication of silicon-on-nothing (SON) MOSFET fabrication using selective etching of Si1-xGex layer Electricity 40 Expired
US6583000B1 Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation Electricity 40 Expired
US6767802B1 Methods of making relaxed silicon-germanium on insulator via layer transfer Electricity 34 Expired
US7608874B2 Fully isolated photodiode stack Electricity 33 Active
US6825086B2 Strained-silicon channel CMOS with sacrificial shallow trench isolation oxide liner Electricity 31 Expired
US7008813B1 Epitaxial growth of germanium photodetector for CMOS imagers Emerging Cross-Sectional Technologies 31 Expired
US5962884A Single transistor ferroelectric memory cell with asymmetrical ferroelectric polarization and method of making the same Physics 30 Expired
US7078298B2 Silicon-on-nothing fabrication process Electricity 30 Expired
US6992025B2 Strained silicon on insulator from film transfer and relaxation by hydrogen implantation Electricity 27 Expired
US5731608A One transistor ferroelectric memory cell and method of making the same Physics 27 Expired
US5907762A Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing Electricity 26 Expired
US7906825B2 Ge imager for short wavelength infrared Electricity 22 Active
US6903384B2 System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications Electricity 22 Expired
US5910673A Locos MOS device for ESD protection Emerging Cross-Sectional Technologies 22 Expired
US5891782A Method for fabricating an asymmetric channel doped MOS structure Electricity 21 Expired
US7186611B2 High-density germanium-on-insulator photodiode array Emerging Cross-Sectional Technologies 20 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.