Semiconductor switching element and semiconductor circuit apparatus

US7759760B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Norimasa Yafune · Nara, JP
• John Twynam · Regensburg, DE

Key dates

• Filing date: Jun 29, 2007
• Grant date: Jul 20, 2010
• Expiry date: Jul 25, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/05

Abstract

A semiconductor switching element, wherein on a semiconductor layer formed on a substrate, or on a semiconductor substrate, a source electrode and a drain electrode are disposed at a predetermined interval in a direction along a surface of the substrate; and a second gate electrode is provided between the source electrode and the drain electrode, the second gate electrode is electrically connected with the source electrode and structured with two types of electrode material layers having Schottky barriers of different heights from each other.