Semiconductor device with two barrier layers formed between copper-containing line layer and aluminum-containing conductive layer
US7759796B2 · kind B2 · utility
5Cited by
1References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 23, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | May 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment of the present invention includes a line layer containing Cu (copper), an inter layer dielectric formed on the line layer, a via hole formed in the inter layer dielectric on the line layer, a first barrier layer formed on the line layer in the via hole, a second barrier layer formed on the first barrier layer and on a sidewall of the via hole, and a conductive layer formed on the second barrier layer and containing Al (aluminum).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.