Monitoring a photolithographic process using a scatterometry target
US7760360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2007 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Apr 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method is provided for monitoring a photolithographic process in which a substrate is patterned to form (i) a scatterometry target having a plurality of parallel elongated features, and desirably, (ii) other features each having at least one of a microelectronic function or a micro-electromechanical function. Desirably, each elongated feature of the scatterometry target has a length in a lengthwise direction and a plurality of stress-relief features disposed at a plurality of positions along the length of each elongated feature. A return signal is detected in response to illumination of the scatterometry target. The return signal can be used to determine a result of the photolithographic process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.