Methods of reading data from non-volatile semiconductor memory device
US7760550B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2008 |
| Grant date | Jul 20, 2010 |
| Priority date | — |
| Expiry date | Jan 12, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3418
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of reading data in a non-volatile memory device includes applying a bit line read voltage to a bit line and a selected cell read voltage to a word line, both of which are electrically connected to a selected cell located in a selected string. A first read voltage is applied to word lines electrically connected to first non-selected cells separated from the selected cell in the selected string, and a second read voltage is applied to word lines electrically connected to second non-selected cells adjacent to the selected cell in the selected string. The second read voltage is lower than the first read voltage. A pass voltage is applied to turn on a string select transistor and a ground select transistor, respectively, in the selected string. An electrical signal output from the selected string is compared with a standard signal to read data stored in the selected cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.