Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting device
US7763486B2 · kind B2 · utility
1Cited by
6References
10Claims
0Family size
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Key dates
| Filing date | Dec 5, 2007 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Apr 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor stacked structure having good working efficiency includes a p-type nitride semiconductor layer of low resistance, which is formed from an organometallic compound, compounds including Group V elements, including ammonia and a hydrazine derivative, and a p-type impurity material on a substrate. The p-type nitride layer has a carbon concentration not higher than 1×1018 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.