Method for manufacturing silicon carbide semiconductor device
US7763504B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 19, 2008 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Aug 30, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/87
Abstract
A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.