Inventor · Iwakura, JP

Toshiyuki Morishita

38Patents
11h-index
66Co-inventors
78Inventor score

Filing activity: Sep 26, 1996 → Jun 18, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6118152A Semiconductor device and method of manufacturing the same Electricity 54 Expired
US8023698B2 Information device operation apparatus Physics 51 Active
US5777365A Semiconductor device having a silicon-on-insulator structure Electricity 47 Expired
US6525375B1 Semiconductor device having trench filled up with gate electrode Electricity 41 Expired
US6495883B2 Trench gate type semiconductor device and method of manufacturing Electricity 38 Expired
US6630389B2 Method for manufacturing semiconductor device Electricity 19 Expired
US6710435B2 Semiconductor device arrangement and method of fabricating the same Electricity 17 Expired
US6855981B2 Silicon carbide power device having protective diode Electricity 16 Expired
US6696323B2 Method of manufacturing semiconductor device having trench filled up with gate electrode Electricity 15 Expired
US7855384B2 SIC semiconductor device and method for manufacturing the same Electricity 14 Active
US7732821B2 Silicon carbide semiconductor device Electricity 13 Active
US6938473B2 Apparatus for measuring flow amount Physics 8 Expired
US7073331B2 Steam engine Mechanical Engineering; Lighting; Heating 8 Expired
US7185491B2 Steam engine Mechanical Engineering; Lighting; Heating 6 Expired
US7129176B2 Optical device having micro lens array and method for manufacturing the same Electricity 5 Expired
US6973788B2 Steam engine Mechanical Engineering; Lighting; Heating 4 Expired
US7268677B2 Information processing system Performing Operations; Transporting 4 Expired
US7424802B2 Steam engine Mechanical Engineering; Lighting; Heating 3 Active
US7799588B2 Method of manufacturing the optical device by a stopper to form an oxide block Physics 3 Active
US7763504B2 Method for manufacturing silicon carbide semiconductor device Electricity 3 Active
US7230283B2 Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each groove Electricity 3 Expired
US8456076B2 Electron emitting source and manufacturing method of electron emitting source Electricity 2 Active
US7355207B2 Silicon carbide semiconductor device and method for manufacturing the same Electricity 2 Expired
US7493751B2 External combustion engine Mechanical Engineering; Lighting; Heating 2 Active
US7335928B2 Semiconductor device having a metal conductor in ohmic contact with the gate region on the bottom of each the first groove Electricity 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.