Patent · US Active

Integrated circuit device and method of manufacture

US7763513B2 · kind B2 · utility

10Cited by

6References

10Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Peng Wang · Longbeilingcun, CN
Joachim Nuetzel · Fishkill, US
Rolf Weis · Dresden, DE
Till Schloesser · Dresden, DE
Marc Strasser · Munich, DE
Hannes Luyken · Munich, DE

Key dates

Filing date	Sep 9, 2005
Grant date	Jul 27, 2010
Priority date	—
Expiry date	Aug 4, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/518
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a transistor is disclosed. The method includes forming a first and a second source/drain regions, a channel connecting the first and the second source/drain regions and a gate electrode for controlling the conductivity of the channel. The gate electrode is formed by defining a gate groove in the substrate, and defining a pocket in each of the isolation trenches at a position adjacent to the groove so that the two pockets will be connected with the groove and the groove is disposed between the two pockets. A gate insulating material is provided at an interface between the active area and the groove and at an interface between the active area and the pockets. A gate electrode material is deposited so as to fill the groove and the two pockets.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.