Capacitor device with a layer structure disposed in a meander-shaped manner

US7763520B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Carsten Ahrens · Birkenfeld, DE
• Raimund Foerg · Straubing, DE
• Klaus-Peter Koller · Bad Soden, DE
• Kai-Olaf Subke · Grafing, DE

Key dates

• Filing date: Aug 2, 2007
• Grant date: Jul 27, 2010
• Expiry date: Apr 30, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/212

Abstract

A capacitor device includes a substrate, a first conductive structure, a second conductive structure, a dielectric layer structure, and a recess in the substrate. The first and second conductive structures are disposed on opposite sides of the dielectric layer structure, and the dielectric layer structure extends in a meander-shaped manner in a cross-section through the recess.