Method for producing a metal backside contact of a semiconductor component, in particular, a solar cell

US7763535B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Roland TRASSL · Gießen, DE
• Jian-Qiang Liu · Kunshan, CN
• Stephan Wieder · Frankfurt, DE
• Jurgen Henrich · Limeshain, DE
• Gerhard Rist · Langenselbold, DE

Key dates

• Filing date: Aug 29, 2008
• Grant date: Jul 27, 2010
• Expiry date: Aug 29, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

The present invention relates to a method for manufacturing a backside contact of a semiconductor component, in particular, of a solar cell, comprising a metallic layer on the backside of a substrate in a vacuum treatment chamber, and the use of a vacuum treatment system for performing said method. Through this method and its use, in particular silicon based solar cells, can be provided with a back contact in a simple manner in a continuous process sequence, wherein the process sequence can be provided particularly efficient and economical, since no handling systems for rotating the substrate are required, and in particular silk screening steps can be dispensed with.