Semiconductor device manufacturing method
US7763545B2 · kind B2 · utility
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18References
7Claims
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Key dates
| Filing date | Feb 25, 2003 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a semiconductor device manufacturing method having the etching step of an electrode material film constituting a capacitor using ferroelectric substance or high- dielectric substance, etching of a conductive film that acts as an electrode of the capacitor formed over a semiconductor substrate is carried out in an atmosphere containing bromine, and a heating temperature of the semiconductor substrate is set in a range of 300° C. to 600° C., otherwise etching of at least the conductive film is carried out in an atmosphere to which only hydrogen bromide and oxygen are supplied from an outside.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.