Acidic post-CMP cleaning composition
US7763577B1 · kind B1 · utility
1Cited by
9References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An acidic post-CMP cleaning composition includes at least one polyamino-polycarboxylic acid, or salt thereof; at least one hydroxycarboxylic acid, or salt thereof; and the remainder being substantially water. The acidic cleaning composition also includes a surfactant. The acidic post-CMP cleaning composition has a pH of 1 to 5, and is useful for removing the contaminants from the wafer surface after a CMP process without making roughness worse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.