Phase changeable memory device structures
US7763878B2 · kind B2 · utility
8Cited by
27References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2008 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jun 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.