Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices
US7763908B2 · kind B2 · utility
3Cited by
16References
5Claims
0Family size
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Key dates
| Filing date | Jul 25, 2005 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Oct 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/80
Abstract
A silicon-controlled rectifier apparatus, comprising a substrate upon which a low-voltage triggered silicon-controlled rectifier is configured. A plurality of triggering components (e.g., NMOS fingers) are formed upon the substrate and integrated with the low-voltage triggered silicon-controlled rectifier, wherein the plurality of triggering components are inserted into the low-voltage triggered silicon-controlled rectifier in order to permit the low-voltage triggered silicon-controlled rectifier to protect against electrostatic discharge during human-body model and charged-device model stress events.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.