Semiconductor device and method of manufacturing such a semiconductor device
US7763944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2005 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jun 8, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
Abstract
The invention relates to a CMOS device (10) with an NMOST I and PMOST 2 having gate regions (1D,2D) comprising a compound containing both a metal and a further element. According to the invention the first and second conducting material both comprise a compound containing as the metal a metal selected from the group comprising molybdenum and tungsten and both comprise as the further element an element selected from the group comprising carbon, oxygen and the chalcogenides. Preferably both the first and second conducting material comprise a compound of molybdenum and carbon or oxygen. The invention also provides an attractive method of manufacturing such a device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.