Semiconductor device and method for manufacturing the same
US7763946B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2007 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jan 16, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a substrate and a p-channel MIS transistor. The p-channel MIS transistor includes: an n-type semiconductor region formed in the substrate; p-type first source and drain regions formed at a distance from each other in the n-type semiconductor region; a first gate insulating film formed on the n-type semiconductor region between the first source region and the first drain region; and a first gate electrode formed on the first gate insulating film. The first gate electrode includes a first nickel silicide layer having a Ni/Si composition ratio of 1 or greater, and a silicide layer formed on the first nickel silicide layer. The silicide layer contains a metal having a larger absolute value of oxide formation energy than that of Si, and a composition ratio of the metal to Si is smaller than the Ni/Si composition ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.