Spin transfer torque magnetoresistive random access memory and design methods
US7764537B2 · kind B2 · utility
21Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2008 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | Jun 28, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems, circuits and methods for determining read and write voltages for a given word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. A first voltage can be supplied to the write operations so that the write operations occur in the saturation region of the word line transistor. A second voltage, which is less than the first voltage, can be supplied for read operations so that the read operations occur in the linear region of the word line transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.