System and method for making photomasks
US7765516B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2007 |
| Grant date | Jul 27, 2010 |
| Priority date | — |
| Expiry date | May 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present application is directed a method for preparing a mask pattern database for proximity correction. The method comprises receiving data from a design database. Mask pattern data describing a first photomask pattern for forming first device features is generated. The first photomask pattern is to be corrected for proximity effects in a proximity correction process. A second set of data is accessed comprising information about second device features, wherein at least a portion of the second set of data is relevant to the proximity correction process. The second set of data is manipulated so as to improve the proximity correction process, as compared with the same proximity correction process in which the second set of data was included in the mask pattern database without being manipulated. At least a portion of the mask pattern data and at least a portion of the manipulated second set of data is included in the mask pattern database.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.