Method of manufacturing a flow rate sensor
US7765679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2006 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Feb 14, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation <100>. This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.