Patent · US Active

Semiconductor wafers with highly precise edge profile and method for producing them

US7767470B2 · kind B2 · utility

0Cited by

4References

5Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Peter Wagner · Starnberg, DE
Hans Gerber · Burghausen, DE
Anton Huber · Burghausen, DE
Joerg Moser · Unterneukirchen, DE

Key dates

Filing date	Jul 26, 2007
Grant date	Aug 3, 2010
Priority date	—
Expiry date	Sep 22, 2028

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB24B9/065
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

A semiconductor wafer has a front side, a rear side and an edge which runs along the circumference of the semiconductor wafer and which connects the front side and the rear side of the edge having a defined edge profile, the edge profile being substantially constant over the entire circumference of the semiconductor wafer. A method for producing such a wafer allows for production of a multiplicity of semiconductor wafers, the edge profile being substantially constant from semiconductor wafer to semiconductor wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.