Image sensor and method for manufacturing the same
US7767481B2 · kind B2 · utility
1Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Aug 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/805
Abstract
Disclosed are an image sensor and a method for manufacturing the same, capable of increasing a light absorbing coefficient by forming a rough surface on a photodiode. The image sensor includes a semiconductor substrate with a plurality of photodiodes thereon having rough upper surfaces, a dielectric layer on the semiconductor substrate, a color filter layer on the dielectric layer, a planarization layer on an entire surface of the semiconductor substrate including the color filter layer, and a plurality of micro-lenses formed on the planarization layer to correspond to the color filter layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.