Methods of forming a multilayer capping film to minimize differential heating in anneal processes
US7767509B2 · kind B2 · utility
1Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Mar 28, 2007 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Dec 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and associated structures of forming a microelectronic device are described. Those methods may include implanting the source/drain region, forming a multilayer cap on the source/drain region, annealing the source/drain region, and removing the multilayer cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.