Semiconductor device and electrical circuit device using thereof
US7768066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2008 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Jan 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A UMOSFET is capable of reducing a threshold voltage and producing a large saturation current. A typical UMOSFET according to the present invention includes: an N+ type SiC substrate constituting a drain layer; an N− type SiC layer that is in contact with the drain layer and constitutes a drift layer; a P type body layer formed on the drift layer and being a semiconductor layer; an N+ type SiC layer constituting a source layer; a trench extending from the source layer to a predetermined location placed in the drift layer; a P type electric field relaxation region provided around and outside a bottom portion of the trench; and a channel region extending from the N+ type source layer to the P type electric field relaxation region and having an impurity concentration higher than that of the N− type drift layer and lower than that of the P type body layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.