Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices
US7768071B2 · kind B2 · utility
8Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2008 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Jan 21, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure includes a semiconductor substrate of a first conductivity type; a pre-high-voltage well (pre-HVW) in the semiconductor substrate, wherein the pre-HVW is of a second conductivity type opposite the first conductivity type; a high-voltage well (HVW) over the pre-HVW, wherein the HVW is of the second conductivity type; a field ring of the first conductivity type occupying a top portion of the HVW; and a tunnel of the first conductivity type in the pre-HVW and the HVW, and electrically connecting the field ring and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.