Dual salicide integration for salicide through trench contacts and structures formed thereby

US7768074B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Oleg Golonzka · Beaverton, US
• Bernhard Sell · Dresden, DE

Key dates

• Filing date: Dec 31, 2008
• Grant date: Aug 3, 2010
• Expiry date: Dec 31, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and associated structures of forming a microelectronic device are described. Those methods may include forming an NMOS silicide on an NMOS source/drain contact area, forming a first contact metal on the NMOS silicide, polishing the first contact metal to expose a top surface of a PMOS source/drain region, and forming a PMOS silicide on the PMOS source/drain region.