Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes
US7768085B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2006 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Jul 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
A photodetector array includes a semiconductor substrate having opposing first and second main surfaces, a first layer of a first doping concentration proximate the first main surface, and a second layer of a second doping concentration proximate the second main surface. The photodetector includes at least one conductive via formed in the first main surface and an anode/cathode region proximate the first main surface and the at least one conductive via. The via extends to the second main surface. The conductive via is isolated from the semiconductor substrate by a first dielectric material. The anode/cathode region is a second conductivity opposite to the first conductivity. The photodetector includes a doped isolation region of a third doping concentration formed in the first main surface and extending through the first layer of the semiconductor substrate to at least the second layer of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.