Patent · US Active

MIM capacitor integrated into the damascene structure and method of making thereof

US7768099B2 · kind B2 · utility

5Cited by
27References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2006
Grant dateAug 3, 2010
Priority date—
Expiry dateJun 2, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

This invention provides for the integration of metal-insulator-metal (MIM) capacitors with the damascene interconnect structure and process. The method includes forming a damascene interconnect structure and a MIM capacitor damascene structure wherein a diffusion barrier material forms the capacitor electrodes. The method includes forming a MIM capacitor damascene structure through an interlevel dielectric layer and terminating on a diffusion barrier material instead of a conventional dielectric etch stop layer. In alternative embodiments, the integrated damascene MIM capacitor makes up part of semiconductor device such as DRAM memory, CMOS, or a high frequency device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.