Patent · US Active

Semiconductor device

US7768118B2 · kind B2 · utility

7Cited by
4References
4Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 3, 2008
Grant dateAug 3, 2010
Priority date
Expiry dateNov 4, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/351
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a substrate, a semiconductor element, an electrode lead, and a sealing resin portion. The substrate has a main surface on which a circuit pattern is formed. The semiconductor element has first and second surfaces, and is arranged on the substrate such that the first surface faces the main surface. The electrode lead has one end joined to the circuit pattern and the other end joined by soldering to the second surface. The other end has a plurality of portions divided from each other. The sealing resin portion seals the semiconductor element and the electrode lead. Thus, there can be provided a semiconductor device that has relieved thermal stress at a joining portion of the electrode lead, and therefore is less subject to fatigue failure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.