Bulk acoustic resonators with multi-layer electrodes
US7768364B2 · kind B2 · utility
29Cited by
13References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2008 |
| Grant date | Aug 3, 2010 |
| Priority date | — |
| Expiry date | Sep 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/589
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Bulk acoustic resonators with multi-layer electrodes for Bulk Acoustic Wave (BAW) resonator devices. Various electrode combinations are disclosed. The invention provides a better compromise at resonant frequencies from 1800 MHz to 4 GHz in terms of keff2 and resistance than state of the art solutions using either Mo, or a bilayer of Al and W.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.