Inventor · Albany, NY, US

Guillaume Bouche

157Patents
15h-index
165Co-inventors
89Inventor score

Filing activity: Jan 11, 2002 → Dec 29, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7684109B2 Bragg mirror optimized for shear waves Electricity 263 Active
US10014390B1 Inner spacer formation for nanosheet field-effect transistors with tall suspensions Electricity 54 Active
US9276064B1 Fabricating stacked nanowire, field-effect transistors Electricity 38 Active
US9362165B1 2D self-aligned via first process flow Electricity 35 Active
US10026824B1 Air-gap gate sidewall spacer and method Electricity 31 Active
US7768364B2 Bulk acoustic resonators with multi-layer electrodes Electricity 29 Active
US9431512B2 Methods of forming nanowire devices with spacers and the resulting devices Electricity 27 Active
US6822329B2 Integrated circuit connecting pad Emerging Cross-Sectional Technologies 23 Expired
US7966722B2 Planarization method in the fabrication of a circuit Emerging Cross-Sectional Technologies 22 Active
US9406775B1 Method for creating self-aligned compact contacts in an IC device meeting fabrication spacing constraints Electricity 21 Active
US9818641B1 Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines Electricity 20 Active
US9691775B1 Combined SADP fins for semiconductor devices and methods of making the same Electricity 19 Active
US9825031B1 Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices Electricity 16 Active
US7179392B2 Method for forming a tunable piezoelectric microresonator Emerging Cross-Sectional Technologies 15 Expired
US9805988B1 Method of forming semiconductor structure including suspended semiconductor layer and resulting structure Electricity 15 Active
US10566248B1 Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar Electricity 14 Active
US9852986B1 Method of patterning pillars to form variable continuity cuts in interconnection lines of an integrated circuit Electricity 14 Active
US9818651B2 Methods, apparatus and system for a passthrough-based architecture Electricity 14 Active
US9818640B1 Apparatus and method of forming self-aligned cuts in a non-mandrel line of an array of metal lines Electricity 14 Active
US9455204B1 10 nm alternative N/P doped fin for SSRW scheme Electricity 13 Active
US9812400B1 Contact line having insulating spacer therein and method of forming same Electricity 13 Active
US9899268B2 Cap layer for spacer-constrained epitaxially grown material on fins of a FinFET device Electricity 12 Active
US10002786B1 Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts Electricity 12 Active
US9306019B2 Integrated circuits with nanowires and methods of manufacturing the same Electricity 11 Active
US9425097B1 Cut first alternative for 2D self-aligned via Electricity 11 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.