Patent · US Expired

Process and apparatus for producing a silicon single crystal

US7771530B2 · kind B2 · utility

0Cited by

14References

1Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Janis Virbulis · Burghausen, DE
Wilfried von Ammon · Burghausen, DE
Erich Tomzig · Altötting, DE
Yuri Gelfgat · Beer Sheva, IL
Lenoid Gorbunov · Rīga, LV

Key dates

Filing date	Jan 17, 2002
Grant date	Aug 10, 2010
Priority date	—
Expiry date	Jan 17, 2022

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B15/305
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process for producing a silicon single crystal is by pulling the single crystal from a silicon melt which is contained in a crucible with a diameter of at least 450 mm, above which a heat shield is arranged. The single crystal being pulled has a diameter of at least 200 mm. The silicon melt is exposed to the influence of a traveling magnetic field which exerts a substantially vertically oriented force on the melt in the region of the crucible wall. There is also an apparatus which is suitable for carrying out the process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.