Method for fabrication of semiconductor device
US7772053B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Feb 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/025
Abstract
After forming a source-drain material film on an insulator layer, an opening portion reaching the insulator layer is formed in the source-drain material film. Then, a channel having desired thickness and a gate insulator are sequentially formed on the insulator layer and the source-drain material film in the opening portion. Thereafter, a gate material film embedding the opening portion is formed on the gate insulator. Subsequently, a cap film is formed on the gate material film, thereby forming the gate made of the gate material film. Then, a mask layer is formed on the source-drain material film. Next, the source-drain material film not protected by the mask layer is removed while protecting the gate by the cap film, thereby leaving the source-drain material film on both sides of the gate. The source-drain material film on one side becomes the source and that on the other side becomes the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.