Methods for laser scribing wafers
US7772090B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Mar 23, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for singulating dies from a wafer includes laser scribing a continuous line on each side of the die, and laser ablating an area adjacent the laser scribed continuous line on each side of the die. The laser ablations in the area adjacent the laser scribed continuous line on each side of the die being spaced from one another. The method also includes sawing the laser abated area adjacent the continuous line. A method for singulating dies from a wafer includes laser scribing a first continuous line, laser scribing a second continuous line spaced apart from the first continuous line, and laser scribing a third continuous line. The third continuous line positioned between the first continuous line and the second continuous line. The third continuous line overlaps the second continuous line and the third continuous line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.