Phase-change memory device and method for manufacturing the same
US7772101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2008 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jun 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/20
Abstract
A phase-change memory device and a fabrication method thereof, capable of reducing driving current while minimizing a size of a contact hole used for forming a PN diode in the phase-change memory device that employs the PN diode. The method of fabricating the phase-change memory device includes the steps of preparing a semiconductor substrate having a junction area formed with a dielectric layer, forming an interlayer dielectric layer having etching selectivity lower than that of the dielectric layer over an entire structure, and forming a contact hole by removing predetermined portions of the interlayer dielectric layer and the dielectric layer. The contact area between the PN diode and the semiconductor substrate is increased so that interfacial resistance is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.