Method of manufacturing a through-silicon-via on-chip passive MMW bandpass filter

US7772124B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Amit Bavisi · Tempe, US
• Hanyi Ding · Colchester, US
• Guoan Wang · South Burlington, US
• Wayne H. Woods, Jr. · Burlington, US
• Jiansheng Xu · Londonderry, GB

Key dates

• Filing date: Jun 17, 2008
• Grant date: Aug 10, 2010
• Expiry date: Aug 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a through-silicon via bandpass filter includes forming a substrate comprising a silicon layer and providing a metal layer on a bottom side of the silicon layer. Additionally, the method includes providing a dielectric layer on a top side of the silicon layer and forming a top-side interconnect of the through-silicon via bandpass filter on a surface of the dielectric layer. Further, the method includes forming a plurality of contacts in the dielectric layer in contact with the top-side interconnect and forming a plurality through-silicon vias through the substrate and in contact with the plurality of contacts, respectively, and the metal layer.