Implant beam utilization in an ion implanter
US7772571B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jan 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.