Patent · US Active

Integrated circuit having a cell with a resistivity changing layer

US7772580B2 · kind B2 · utility

58Cited by

6References

30Claims

0Family size

Assignee

Qimonda AG · DE

Inventors

Franz Hofmann · Munich, DE
Josef Willer · Riemerling, DE

Key dates

Filing date	Aug 10, 2007
Grant date	Aug 10, 2010
Priority date	—
Expiry date	Nov 3, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG11C13/0004
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In an embodiment of the invention, an integrated circuit having a cell is provided. The cell may include a field effect transistor structure which includes a gate stack and a resistivity changing material structure disposed above the gate stack, wherein the resistivity changing material structure includes a resistivity changing material which is configured to change its resistivity in response to the application of an electrical voltage to the resistivity changing material structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.