Optical semiconductor devices on InP substrate
US7772586B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 8, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Nov 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/823
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime.Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2 ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10 ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.